Ran Cheng

Postdoctoral Scholar

Computer Science Department

Computer Architecture Group

Biographical Sketch

Ran Cheng is a Postdoctoral Scholar in the Computer Architecture Group in the Computational Research Division at Lawrence Berkeley National Laboratory. He received his Ph.D. (2021) in Electrical Engineering from Auburn University, Auburn, Alabama.

Ran's research interests include superconducting neuromorphic circuits and superconducting oscillatory neural network design. He also has research experience with superconducting and semiconducting device fabrication and characterization.

Current Project

Neuromorphic Project: Develop brain-inspired algorithm for energy efficient distributed oscillatory computing and design superconducting hardware circuits to implement those

Journal Articles

Ran Cheng, Christoph Kirst, Dilip Vasudevan, "Superconducting-Oscillatory Neural Network With Pixel Error Detection for Image Recognition", IEEE Transaction on Applied Superconductivity, August 2023, 33:1-7,

Hao Li, Han Cai, Joseph Forman, Ran Cheng, et al., "Transport Properties of NbN Thin Films Patterned With a Focused Helium Ion Beam", IEEE Transactions on Applied Superconductivity, August 2023,

Ran Cheng, Uday S. Goteti, Harrison Walker, Keith M. Krause, Luke Oeding, Michael C. Hamilton, "Toward Learning in Neuromorphic Circuits Based on Quantum Phase Slip Junctions", Frontiers in Neuroscience, November 8, 2021,

Ran Cheng, Uday S. Goteti, Michael C. Hamilton, "High-Speed and Low-Power Superconducting Neuromorphic Circuits Based on Quantum Phase-Slip Junctions", IEEE Transactions on Applied Superconductivity, August 2021,

Ran Cheng, Uday S. Goteti, Michael C. Hamilton, "Superconducting Neuromorphic Computing Using Quantum Phase-Slip Junctions", IEEE Transactions on Applied Superconductivity, August 2019,

Ran Cheng, Uday S. Goteti, Michael C. Hamilton, "Spiking Neuron Circuits Using Superconducting Quantum Phase-Slip Junctions", Journal of Applied Physics, October 21, 2018,

S. Wang, V. Mirkhani, K. Yapabandara, R. Cheng, et al., "Electrical Characteristics and Density of States of Thin-Film Transistors Based on Sol-Gel Derived ZnO Channel Layers With Different Annealing Temperatures", Jonrnal of Applied Physics, April 28, 2018,